| PART |
Description |
Maker |
| SUM110P06-08L SUM110P06-08L-E3 |
TRANSISTOR 110 A, 60 V, 0.008 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263, LEAD FREE PACKAGE-3, FET General Purpose Power
110 A, 60 V, 0.008 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263 TO-263, 3 PIN
110 A, 60 V, 0.008 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263 LEAD FREE PACKAGE-3
P-Channel 60-V (D-S) 175 Degrees Celcious MOSFET
MOSFETs
|
Vishay Semiconductors
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| HUFA75344S3 HUFA75344S3S HUFA75344P3 HUFA75344G3 |
1 PIN M STR AU 50 OHM 4 MH
75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs
75A 55V 0.008 Ohm N-Channel UltraFET Power MOSFETs
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| HRF3205ST HRF3205L |
100 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
100 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
HARRIS SEMICONDUCTOR
|
| HUF75652G3 |
75A, 100V, 0.008 Ohm, N-Channel UltraFETPower MOSFET
TRANSISTOR,MOSFET,N-CHANNEL,100V
75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET
75A/ 100V/ 0.008 Ohm/ N-Channel UltraFET Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| HUF75652G3 FN4746 |
75A/ 100V/ 0.008 Ohm/ N-Channel UltraFET Power MOSFET
75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| STS12NH3LL |
N-CHANNEL 30V - 0.008 Ohm - 12A SO-8 ULTRA LOW GATE CHARGE STripFET™ MOSFET
N-CHANNEL 30 V - 0.008 ?- 12 A SO-8 ULTRA LOW GATE CHARGE STripFET MOSFET
N-CHANNEL PowerMESH MOSFET
N-CHANNEL 30 V - 0.008 з - 12 A SO-8 ULTRA LOW GATE CHARGE STripFET⑩ MOSFET
N-CHANNEL 30 V - 0.008 з - 12 A SO-8 ULTRA LOW GATE CHARGE STripFETMOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCI |
MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2)
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L)
MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P
MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM
MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| FS100SMJ-03 |
100 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
HIGH-SPEED SWITCHING USE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| STB80NF55-08T4 STB80NF55-08-1 |
80 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
N-CHANNEL 55V - 0.0065 OHM - 80A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET
|
STMICROELECTRONICS
ST Microelectronics
|
| AUIRL3705ZS AUIRL3705ZSTRR AUIRL3705ZL AUIRL3705ZS |
75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Logic Level Advanced Process Technology
|
International Rectifier
|
| BUK9Y07-30B |
N-channel TrenchMOS logic level FET 75 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
|
NXP Semiconductors N.V.
|
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